Electrical and photovoltaic properties of SnSe/Si heterojunction |
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| Institution: | 1. Department of Physics, Faculty of Education, Ain Shams University, Roxy Square, Cairo 11757, Egypt;2. Department of Physics, Faculty of Education at Al-Mahweet, Sana''a University, Al-Mahweet, Yemen;1. Department of Physics, The University of Lahore, 1-Km Raiwind Road, Lahore, 53700, Pakistan;2. Energy Conversion and Storage – ECS, Physik-Department, Technische Universität München, James-Franck-Straße 1, 85748, Garching, Germany;3. Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;4. Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM, Skudai, 81310, Johor, Malaysia;5. Centre for High Energy Physics, University of the Punjab, Lahore, Pakistan;6. Research Centre of Materials Science, Beijing Institute of Technology, Beijing, 100081, People''s Republic of China;1. Department of Materials Science and Engineering, Zhejiang Normal University, Jinhua 321004, China;2. Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Institute of Physical Chemistry, Zhejiang Normal University, Jinhua 321004, China;1. Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea;2. IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;3. Dept. of Materials Science and Engineering, Yeungnam University, 280, Daehak-ro, Gyeongsan-si, Gyeongsangbuk-do, 38541, Republic of Korea;4. Korea Research Institute of Standards and Science, 267 Gajeong-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea;1. Hubei University of Science and Technology, Xianning, 437100, PR China;2. Institute of Optoelectronics & Nanomaterials College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, PR China;3. Department of Energy Materials and Technology, General Research Institute for Nonferrous Metals, Beijing, 100029, PR China;4. School of Information and Engineering, Nanchang University, Nanchang, Jiangxi, 330031, PR China |
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| Abstract: | Thin film of SnSe is deposited on n-Si single crystal to fabricate a p-SnSe/n-Si heterojunction photovoltaic cell. Electrical and photoelectrical properties have been studied by the current density–voltage (J–V) and capacitance–voltage (C–V) measurements at different temperatures. The fabricated cell exhibited rectifying characteristics with a rectification ratio of 131 at ±1 V. At low voltages (V<0.55 V), the dark forward current density is controlled by the multi-step tunneling mechanism. While at a relatively high voltage (V>0.55 V), a space charge-limited-conduction mechanism is observed with trap concentration of 2.3×1021 cm?3. The C–V measurements showed that the junction is of abrupt nature with built-in voltage of 0.62 V which decreases with temperature by a gradient of 2.83×10?3 V/K. The cell also exhibited strong photovoltaic characteristics with an open-circuit voltage of 425 mV, a short-circuit current density of 17.23 mA cm?2 and a power conversion efficiency of 6.44%. These parameters have been estimated at room temperature and under light illumination provided by a halogen lamp with an input power density of 50 mW cm?2. |
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| Keywords: | Heterojunctions Photovoltaic properties Solar cell |
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