Low-field carrier transport properties in biased bilayer graphene |
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| Affiliation: | 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. Department of Physics, Tsinghua University, Beijing 100084, China;1. Faculty of Engineering, Shahrekord University, Shahrekord, Iran;2. Nanotechnology Research Center, Shahrekourd University, Shahrekord, Iran;1. Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey;2. Grupo de Materia Condensade-UdeA, Instituto de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia;3. Facultad de Ciencias, Universidad Autonóma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico;4. Department of Physics, Dokuz Eylül University, 35160 Buca, İzmir, Turkey;1. Institute of Micro-engineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, Malaysia;2. Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;3. Materials Science and Technology Division (MST-7), Los Alamos National Laboratory, Los Alamos, NM 87545, USA;4. Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8520, Japan;5. Physica Faculty, Eastern European university, Lutsk, Voli 6, Ukraine;6. Faculty of Electrical Engineering, Czestochowa University technology, Armii Krajowej 17, PL-42201 Czestochowa, Poland |
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| Abstract: | Based on a semiclassical Boltzmann transport equation in random phase approximation, we develop a theoretical model to understand low-field carrier transport in biased bilayer graphene, which takes into account the charged impurity scattering, acoustic phonon scattering, and surface polar phonon scattering as three main scattering mechanisms. The surface polar optical phonon scattering of carriers in supported bilayer graphene is thoroughly studied using the Rode iteration method. By considering the metal–BLG contact resistance as the only one free fitting parameter, we find that the carrier density dependence of the calculated total conductivity agrees well with that observed in experiment under different temperatures. The conductivity results also suggest that in high carrier density range, the metal–BLG contact resistance can be a significant factor in determining the BLG conductivity at low temperature, and both acoustic phonon scattering and surface polar phonon scattering play important roles at higher temperature, especially for BLG samples with a low doping concentration, which can compete with charged impurity scattering. |
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| Keywords: | Biased bilayer graphene Boltzmann transport equation Random phase approximation Surface polar phonon scattering |
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