Band structure of deformed armchair nanoribbon with bond alternation |
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| Institution: | 1. Institute of Research and Development, Duy Tan University, Da Nang, Vietnam;2. Department of Environmental Science, Saigon University, Ho Chi Minh city, Vietnam;1. Institute of Physics, National Academy of Sciences of Ukraine, 46 pr. Nauki, Kiev 03028, Ukraine;2. Physical–technical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod 603950, Russia;1. Department of Physics, Trakya University, Edirne 22030, Turkey;2. Department of Mathematics, Trakya University, Edirne 22030, Turkey;1. Departamento de Física, Pontifícia Universidade Católica de Goiás, 74605-010 Goiânia, Goiás, Brazil;2. Condensed Matter Physics Department, Institute of Physics “Gleb Wataghin”, State University of Campinas-Unicamp, 13083-859 Campinas, SP, Brazil;1. School of Mechanical and Electronic Engineering, Suzhou University, Suzhou 234000, China;2. School of Mechanical and Vehicle Engineering, Anhui Polytechnic University, Wuhu 241000, China |
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| Abstract: | Electronic energy band structure of deformed armchair graphene nanoribbons with bond alternation is studied by the tight-binding approximation. In the presence of bond alternation, all armchair graphene nanoribbons become semiconducting with small band gap opened at center of the Brillouin zone. Under tensional strain, armchair graphene nanoribbons can become metallic at the critical values of deformation and we can control the band gap of nanoribbon by its strain. |
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| Keywords: | Deformed nanoribbon Bond alternation Tight-binding approximation |
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