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Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes
Institution:1. Bülent Ecevit University, Department of Electrical and Electronics Engineering, Zonguldak, Turkey;2. Tunceli University, Department of Metallurgical and Materials Engineering, Tunceli, Turkey;3. Sakarya University, Department of Metallurgical and Materials Engineering, Sakarya, Turkey;4. Bülent Ecevit University, Department of Metallurgical and Materials Engineering, Zonguldak, Turkey;5. Yıldırım Beyazıt University, Department of Materials Engineering, Ankara, Turkey;6. Gaziosmanpaşa University, Department of Physics, Tokat, Turkey
Abstract:
Keywords:Schottky barrier height  Current transport mechanism  Barrier inhomogeneities  Series resistance
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