Dielectric loss of neutron-irradiated nanocrystalline silicon carbide (3C-SiC) as a function of frequency and temperature |
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| Institution: | 1. Institute of Radiation Problems of Azerbaijan National Academy of Sciences, AZ 1143, B.Vahabzade 9, Baku, Azerbaijan;2. Department of Nanotechnology and Radiation Material Science, National Nuclear Research Center, AZ 1073, Inshaatchilar pr. 4, Baku, Azerbaijan;1. State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metal, Lanzhou University of Technology, Lanzhou 730050, China;2. Key Laboratory of Nonferrous Metal Alloys and Processing, Ministry of Education, Lanzhou University of Technology, Lanzhou 730050, China;1. Volgograd State Social Pedagogical University, 27 Lenin Avenue, Volgograd 400131, Russia;2. Volgograd State Technical University, 28 Lenin Avenue, Volgograd 400131, Russia |
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| Abstract: | At the present work, nanocrystalline 3C-SiC has been irradiated by neutron flux (2 × 1013 n·cm−2s−1) up to 20 h in a TRIGA Mark II type research reactor. The dielectric loss of nanocrystalline 3C-SiC was studied comparatively before and after neutron irradiation. The increased dielectric loss was clearly observed after neutron irradiation in both f(tanδ) ∼ f(f) and f(tanδ) ∼ f(T) plots. Furthermore, slope observed on the f(tanδ) ∼ f(f) plots at certain values of the frequency. Dielectric loss increasing and shifted slope explained by the neutron transmutation, dangling bonds, the formation of the defects or additional charge carriers. Moreover, the mechanism of all effects obtained from the experiments was explained by the polarization approach. |
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