| 利用肖特基势垒特性研究4mm波段硅雪崩二极管的杂质分布 |
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| 引用本文： | 林鸿溢. 利用肖特基势垒特性研究4mm波段硅雪崩二极管的杂质分布[J]. 物理学报, 1978, 27(3): 291-302 |
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| 作者姓名： | 林鸿溢 |
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| 作者单位： | 中国科学院半导体研究所 |
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| 摘 要： | 本文研究了4mm波段硅雪崩二极管剖面的杂质浓度分布。测量并讨论了研制器件的外延层杂质分布特性,和器件杂质分布及其对器件性能的影响。文中阐述了肖特基势垒的基本方程,给出计算曲线;讨论了测量条件及产生误差的主要方面。作为实验技术的改进,我们装置了水银探针,讨论了确定Hg-Si势垒面积的理论依据和测量方法,并获得了Hg-Si势垒高度φms和内建势Vbi的实验值,以及稳定势垒面积的条件。关键词：
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| 收稿时间： | 1977-04-26 |
AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICS |
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| LIN HONG-YI. AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICS[J]. Acta Physica Sinica, 1978, 27(3): 291-302 |
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| Authors: | LIN HONG-YI |
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| Abstract: | In this paper, the impurity profile of the 4 mm band silicon avalanche diode is studied by means of the characteristics of the Schottky barrier. The characteristics of the impurity profile of the epitaxial layers, the impurity profile of the device and its effects on device performance are measured and discussed. |
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