Polytypism of silicon carbide and Schottky barriers |
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| Authors: | S Yu Davydov O V Posrednik |
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| Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) St. Petersburg State University of Electrical Engineering (LETI), St. Petersburg, 197376, Russia |
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| Abstract: | The results obtained in our previous work 4] are revised taking into account the dependence of the electron affinity on the polytype of silicon carbide SiC. The dependence of the energy level of vacancies in a polytype of silicon carbide on the band gap is determined from the data on the Schottky barrier height and is explained in the framework of a simple two-band model. |
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