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Incorporation of hydrogen in CdTe and HgTe epitaxial layers grown by MOCVD |
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| Authors: | L. Svob Y. Marfaing F. Desjonqueres R. Druilhe |
| Affiliation: | a Laboratoire de Physique des Solides de Bellevue, C.N.R.S, 1, Place A. Briand, 92195, Meudon Cedex, France |
| Abstract: | The incorporation of hydrogen into MOCVD-grown layers of CdTe, HgTe and CdHgTe using H2 as the vector gas has been studied. Concentrations of incorporated H going from 6.5 × 1017 cm-3 to 5 × 1018 cm-3 have been found by SIMS in CdTe layers. This concentration decreases with increasing growth temperature and decreasing bond strength of the host material. |
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