低温CVD法在玻璃衬底上制备ZnO纳米线阵列

采用化学气相沉积(CVD)法在镀Cr(20nm)的玻璃衬底上,低温制备了ZnO纳米线阵列。利用扫描电子显微镜(SEM)和X射线衍射(XRD)对样品的表面形貌和微结构进行了分析表征。结果表明:源分解温度1350℃,衬底温度450～500℃,氩气流量为35sccm时,ZnO纳米线在玻璃衬底上呈现有序生长;XRD谱图中只观测到ZnO(002)衍射峰。表明制备的纳米线阵列具有高度c轴择优取向生长特性和较高的结晶质量。

Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition

Well-aligned ZnO nanowire arrays were synthesized on Chromium (20 nm) coated glass substrates via chemical vapor deposition (CVD) method in a low temperature. The surface morphology and microstructure of products was characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD). Well-aligned ZnO nanowire arrays were prepared on glass in SEM images when the reaction temperature of source come up to 1 350 ℃, the substrate temperature maintains about 450~500 ℃, and the argon gas flow rate is 35 sccm. The presence of only (002) diffraction peak in the XRD patterns indicated that ZnO nanowire arrays exhibits c-axis preferred orientation and good crystal quality.