高纯硒化镉(CdSe)多晶原料的合成研究

硒化镉(CdSe)是一种重要的Ⅱ-Ⅵ族半导体材料,在核辐射探测、非线性频率转换等方面都有着重要的应用.高纯原料是生长优质CdSe单晶,实现上述应用的基础,但目前合成方法存在效率低、纯度不高等缺点.为此实验室对传统高温元素合成法进行优化,利用理论计算的反应温度点为指导,辅以外部加压,控制内外压差,有效实现原料的批量、安全合成,单次可合成200 g,经粉末衍射(XRD)、综合热分析(TG/DTA)、等离子发射光谱仪(ICP)等测试,合成的原料质量较好,能生长出较大尺寸单晶.文中对合成过程可能的纯度影响因素及控制措施也进行了相应讨论.

Study on the Polycrystalline Synthesis Method for High Purity CdSe Compound

CdSe is one of the most important Ⅱ-Ⅵ group semiconductors, it is widely used in the nuclear radiation detection, nonlinear frequency conversion and so on.As the foundation for achieving these applications, the polycrystals act as the base for the growth of high quality CdSe single crystals.However, the traditional synthesis methods have shortcomings of one kind or another, for instance the lower yield or purity.Hence, a modified synthesis method was introduced, with the aid of numerical simulation, by lowering the pressure difference on the inner and outer crucible, about 200 g CdSe polycrystals could be obtained in one run.The XRD, TG/DTA, ICP methods were used to characterize the synthetic materials, the test results show the prepared materials are high purity and suitable for single crystals growth.The effects on the purity of polycrystals probably exist in the synthesis process are also discussed in the paper.