| 石墨衬底上铝诱导法制备多晶硅薄膜 |
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| 引用本文： | 魏立帅,陈诺夫,张航,王从杰,贺凯,白一鸣,陈吉堃. 石墨衬底上铝诱导法制备多晶硅薄膜[J]. 人工晶体学报, 2017, 46(9): 1709-1713 |
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| 作者姓名： | 魏立帅 陈诺夫 张航 王从杰 贺凯 白一鸣 陈吉堃 |
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| 作者单位： | 华北电力大学可再生能源学院,北京,102206;北京科技大学材料科学与工程学院,北京,100083 |
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| 基金项目： | 北京市自然科学基金(2151004)，中央高校基本科研业务费专项资金(2016MS50) |
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| 摘 要： | 利用磁控溅射技术在石墨衬底上制备了石墨/a-Si/Al和石墨/Al/a-Si叠层结构,采用常规退火(CTA)和快速热退火(RTA)对样品进行退火,系统研究了不同退火条件对多晶硅薄膜制备的影响.利用X射线衍射(XRD),拉曼光谱(Raman)对制备的多晶硅薄膜进行表征,并利用谢乐公式计算了晶粒尺寸,结果表明制备的多晶硅薄膜具有高度(111)择优取向,结晶质量良好,利于后续外延制作多晶硅厚膜电池.基于实验结果,建立了铝诱导晶化模型,很好的解释了实验现象.
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| 关 键 词： | 磁控溅射 铝诱导 石墨衬底 多晶硅薄膜, |
Preparation of Polycrystalline Silicon Thin Film by AIC on Graphite Substrate |
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| WEI Li-shuai,CHEN Nuo-fu,ZHANG Hang,WANG Cong-jie,HE Kai,BAI Yi-ming,CHEN Ji-kun. Preparation of Polycrystalline Silicon Thin Film by AIC on Graphite Substrate[J]. Journal of Synthetic Crystals, 2017, 46(9): 1709-1713 |
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| Authors: | WEI Li-shuai CHEN Nuo-fu ZHANG Hang WANG Cong-jie HE Kai BAI Yi-ming CHEN Ji-kun |
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| Abstract: | In this paper , graphite/a-Si/Al and graphite/Al/a-Si laminated structures were prepared on graphite substrate by magnetron sputtering , and systematically studied the effects of the samples annealed by conventional annealing ( CTA) and rapid annealing ( RTA) .The poly-Si thin films were characterized by means of X-ray diffraction (XRD), Raman spectroscopy (Raman), and the grain size was calculated by the Scherrer formula , which show that the samples with strong preferred ( 111 ) orientation and high crystallization quality are ideal for epitaxial growth poly-Si thick film cells.At the same time, we established the AIC model to explain the mechanism in the inverted AIC process . |
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| Keywords: | magnetron sputtering aluminum-induced crystallization ( AIC) graphite substrate poly-Si thin film |
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