Electronic transport in dual-gated bilayer graphene at large displacement fields |
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Authors: | Taychatanapat Thiti Jarillo-Herrero Pablo |
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Institution: | Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA. |
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Abstract: | We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong nonlinear behavior in the transport characteristics. The effective transport gap is typically 2 orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes. |
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