Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells |
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| Authors: | Wagner Martin Schneider Harald Stehr Dominik Winnerl Stephan Andrews Aaron M Schartner Stephan Strasser Gottfried Helm Manfred |
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| Institution: | Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany. |
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| Abstract: | The near-infrared transmission of a semiconductor multiple quantum well is probed under intense terahertz illumination. We observe clear evidence of the intraexcitonic Autler-Townes effect when the terahertz beam is tuned near the 1s-2p transition of the heavy-hole exciton. The strongly coupled effective two-level system has been driven with terahertz field strengths of up to 10 kV/cm resulting in a Rabi energy of ≈0.6 times the transition energy. The induced near-infrared spectral changes at low intensities are qualitatively explained using a basic two-level model. |
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