| 离子束溅射致Si(110)表面形貌随样品温度变化的演化 |
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| 引用本文： | 漆乐俊,凌立,李维卿,杨新菊,顾昌鑫,陆明.离子束溅射致Si(110)表面形貌随样品温度变化的演化[J].中国物理 B,2005,14(8):1626-1630. |
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| 作者姓名： | 漆乐俊 凌立 李维卿 杨新菊 顾昌鑫 陆明 |
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| 作者单位： | Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University,Shanghai 200433, China;Department of Materials Science, Fudan University, Shanghai 200433, China;Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University,Shanghai 200433, China;Surface Physics Laboratory, Fudan University, Shanghai 200433, China;Department of Materials Science, Fudan University, Shanghai 200433, China;Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University,Shanghai 200433, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 10374016), and the Science and Technology Commission of Shanghai (Grant No 03DJ14001). |
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| 摘 要： | 本文研究了离子能量为1.5keV、束流密度为20?A/cm2正入射Ar+离子束溅射致Si(110)表面形貌随样品温度变化的演化过程。在温度自室温上升至 800?C的过程中, Si(110) 的表面形貌由不规则的纳米点和纳米孔图案变为密集的量子点阵列，同时表面粗糙度也随温度上升不断增加。被通常采用的 Bradley-Harper 模型无法解释上述实验数据。 在考虑溅射过程中存在Ehrlich-Schwoebel 效应后, 进行了已连续动态模型为基础的理论模拟，模拟工作很好的重复了实验结果。
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| 关 键 词： | 硅 表面温度 离子束溅射 量子点 |
| 收稿时间： | 2004-12-19 |
Surface morphology evolution of Si(110) by ion sputtering as a function of sample temperature |
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| Qi Le-Jun,Ling Li,Li Wei-Qing,Yang Xin-Ju,Gu Chang-Xin and Lu Ming.Surface morphology evolution of Si(110) by ion sputtering as a function of sample temperature[J].Chinese Physics B,2005,14(8):1626-1630. |
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| Authors: | Qi Le-Jun Ling Li Li Wei-Qing Yang Xin-Ju Gu Chang-Xin and Lu Ming |
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| Institution: | Department of Materials Science, Fudan University, Shanghai 200433, China; Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University,Shanghai 200433, China; Surface Physics Laboratory, Fudan University, Shanghai 200433, China |
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| Abstract: | Si(110) surface morphology evolution under normal-incident Ar+ ion sputtering has been studied as a function of Si temperature with the ion energy of 1.5keV and the ion flux 20μA/cm2. During temperature rising from room temperature to 800℃, Si(110) surface morphology changes from a dim dot/hole pattern to a distinct dot one, meanwhile the surface
roughness increases steadily. The usually-accepted Bradley--Harper model fails to explain these data. By taking into account the Ehrlich--Schwoebel effect in the nanostructuring process, a simulation work was conducted based on a continuum dynamic model, which reproduces the experimental results. |
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| Keywords: | sputtering surface diffusion silicon nanostructuring models of nonlinear phenomena |
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