Structural and optical properties of Mn doped ZnS semiconductor nanostructures |
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Authors: | D P Gogoi G A Ahmed D Mohanta A Choudhury and G A Stanciu |
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Institution: | (1) Functional Materials Division, Royal Institute of Technology (KTH), 16440 Stockholm, Sweden;(2) Department of Energy Technology, Royal Institute of Technology (KTH), 10044 Stockholm, Sweden; |
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Abstract: | Manganese doped zinc sulphide nanoparticles were fabricated by adopting an inexpensive solution growth route. Different samples
were fabricated by varying Mn concentrations. UV-VIS study reveals blue-shift on the onset of absorption and hence enhancement
in the optical band gap upto 0.75 eV, indicating strong quantum confinement. Photoluminescene study for all the samples display
characteristic band edge peak at ∼410 nm. The broad peak ∼560–580 nm is ascribed to Mn incorporation. Further, structural
investigations were carried out by using X-Ray diffraction and transmission electron microscopy (TEM). |
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