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Structural and optical properties of Mn doped ZnS semiconductor nanostructures
Authors:D P Gogoi  G A Ahmed  D Mohanta  A Choudhury and G A Stanciu
Institution:(1) Functional Materials Division, Royal Institute of Technology (KTH), 16440 Stockholm, Sweden;(2) Department of Energy Technology, Royal Institute of Technology (KTH), 10044 Stockholm, Sweden;
Abstract:Manganese doped zinc sulphide nanoparticles were fabricated by adopting an inexpensive solution growth route. Different samples were fabricated by varying Mn concentrations. UV-VIS study reveals blue-shift on the onset of absorption and hence enhancement in the optical band gap upto 0.75 eV, indicating strong quantum confinement. Photoluminescene study for all the samples display characteristic band edge peak at ∼410 nm. The broad peak ∼560–580 nm is ascribed to Mn incorporation. Further, structural investigations were carried out by using X-Ray diffraction and transmission electron microscopy (TEM).
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