Crystallographic and magnetic properties of SrM thin films on Pt underlayer prepared at various substrate temperatures |
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Authors: | Arkom Kaewrawang Akimitsu Morisako |
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Affiliation: | Department of Information Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan |
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Abstract: | Strontium ferrite (SrM) thin films deposited on thermally oxidized silicon wafer (SiO2/Si) and single crystal sapphire with (0 0 l) orientation (Al2O3(0 0 l)) substrate using Pt underlayer were prepared by DC magnetron sputtering system. It was found that the intensity of (1 1 1) line for Pt and that of (0 0 l) diffraction line for SrM increases with increasing substrate temperature, Tu. The c-axis dispersion angle, Δθ50, of SrM(0 0 8) depends on that of Pt underlayer. Both dispersion angle of Pt(1 1 1) and SrM(0 0 8) decrease with increasing temperature. It was observed that the saturation magnetization of SrM/Pt deposited on SiO2/Si is higher than that of Al2O3 substrate. The coercivity and remanent squareness ratio in perpendicular direction are higher than that in in-plane direction. The maximum of coercivity in perpendicular direction of SrM/Pt films deposited on single crystal Al2O3 is about 4.2 kOe. |
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Keywords: | Strontium ferrite Platinum Perpendicular magnetic recording |
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