CMOS图像传感器辐照损伤效应仿真模拟研究进展

CMOS图像传感器(CIS)工作在空间辐射或核辐射环境中遭受的辐照损伤问题备受关注。对CIS辐照损伤效应进行仿真模拟研究有助于深入揭示辐照损伤机理,进而开展抗辐射加固设计,有效提升CIS抗辐照能力。文章通过梳理国内外开展CIS辐照损伤效应仿真模拟研究方面的进展情况,结合课题组已开展的电子元器件辐照效应仿真模拟和实验研究基础,从CIS器件建模、时序驱动电路建模、辐照损伤效应建模、仿真模拟结果校验等方面探讨了CIS辐照损伤效应的仿真模拟方法,分析总结了当前CIS辐照效应仿真模拟研究中亟待解决的关键技术问题。

Simulation Research Progress of Radiation Damage Effects on CMOS Image Sensors

The problems of radiation damage suffered by the CMOS image sensors (CISs) in space radiation or nuclear radiation environments have been paid much attention. The simulation researches of the CIS will be helpful to reveal the mechanism of radiation damage in the CISs, and then develop the radiation-resistant reinforced design, so as to improve the ability of the radiation resistance of the CISs. The simulation research progress of radiation damage effects in the CISs at home and abroad was briefly introduced. Combining the radiation effect simulation of the electronic components with a lot of practical experience in radiation experiments developed by the project team, the simulation methods of radiation damage effect in the CISs were discussed in the aspects of device physical modeling, clock driving circuit modeling, radiation damage effect modeling and simulation results verification. The key problems that need to be solved in the simulation researches of radiation damage effects in the CISs were analyzed and summarized.