Spin valve effect and negative tunnel magnetoresistance in a quantum dot transistor |
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| Authors: | Yibo Ying |
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| Institution: | National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, China |
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| Abstract: | We study the spin polarized transport through a quantum dot transistor. It is shown that the interplay of large Coulomb interaction and optically induced spin accumulation gives rise to the spin valve effect over a range of bias. We also find negative tunnel magnetoresistance for system with ferromagnetic electrodes. |
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| Keywords: | Quantum dot Spin valve Tunnel magnetoresistance |
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