Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters |
| |
| Authors: | Shuai Zhang Shang-guo Zhu Mao Yang |
| |
| Affiliation: | a State Key Laboratory for Mesoscopic Physics, and Department of Physics, Peking University, Beijing 100871, People's Republic of China
b School of Physics and Engineering and Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, People's Republic of China |
| |
| Abstract: | Considering various In distributions, we investigate electronic structures and light emission of wurtzite InxGa1 − xN (0?x?1) alloys. We find InxGa1 − xN forms a random alloy, in which many several-atom In-N clusters and short In-N- chains can exist. Small In-N clusters, especially in-plane ones, strongly localize valence electrons and dominate light emission in Ga-rich InxGa1 − xN alloys, which is consistent with experiments. |
| |
| Keywords: | InGaN alloy Electronic structure Luminescence mechanism Several-atom In-N cluster |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
