Inelastic tunneling of electrons through a quantum dot with an embedded single molecular magnet |
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Authors: | Bo Chang |
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Affiliation: | Institute of Theoretical Physics and Department of Physics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China |
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Abstract: | We report a theoretical analysis of electron transport through a quantum dot with an embedded biaxial single-molecule magnet (SMM) based on mapping of the many-body interaction-system onto a one-body problem by means of the non-equilibrium Green function technique. It is found that the conducting current exhibits a stepwise behavior and the nonlinear differential conductance displays additional peaks with variation of the sweeping speed and the magnitude of magnetic field. This observation can be interpreted by the interaction of electron-spin with the SMM and the quantum tunneling of magnetization. The inelastic conductance and the corresponding tunneling processes are investigated with normal as well as ferromagnetic electrodes. In the case of ferromagnetic configuration, the coupling to the SMM leads to an asymmetric tunneling magnetoresistance (TMR), which can be enhanced or suppressed greatly in certain regions. Moreover, a sudden TMR-switch with the variation of magnetic field is observed, which is seen to be caused by the inelastic tunneling. |
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Keywords: | Quantum dot Molecule magnet Macroscopic quantum phenomena Magnetoelectronics |
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