Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks |
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Authors: | JQ Ning ZF Wei Yang Ji HC Liu |
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Institution: | a Department of Physics, the University of Hong Kong, Pokfulam Road, Hong Kong, China b State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China c Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada |
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Abstract: | Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of ∼40 ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks. |
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Keywords: | Optical Kerr effect Electron spin Quantum disks InAs/GaAs |
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