Magneto transport on the surface of a topological insulator spin valve |
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Authors: | Bumned Soodchomshom |
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Institution: | a Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand b ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd., Bangkok 10400, Thailand |
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Abstract: | The effects of the magnetization on the transport properties of a ferromagnet/barrier/ferromagnet spin valve fabricated with a topological insulator are studied. We consider two types of junctions, (i) an F1/normal barrier (NB)/F2 junction and (ii) an F1/magnetic barrier (FB)/F2 junction. The junctions in both cases lie in the xy-plane with the magnetizations in both ferromagnetic regions, F1 and F2 aligned in the z-direction. The charge carriers in the topological insulator have a Dirac like energy spectrum of a massive relativistic particle with the magnetization M playing the role of the mass. The gap opening is a special magneto feature of topological insulators. In an anti parallel alignment of the two magnetizations, the mass of the carriers is negative in the region where M is in the negative direction. The negative mass leads the behaviors of the magneto transport properties and the tunneling magneto resistance of these junctions to be quite different from those of graphene-based spin values. |
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Keywords: | Topological insulator Dirac electron Magnetoresistance Spintronics |
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