Interface characterization of a metal‐oxide‐semiconductor structure by biased X‐ray photoelectron spectroscopy

X‐ray photoelectron spectroscopy (XPS) measurements of a Pt/HfO₂(SiO₂)/Si metal‐oxide‐semiconductor (MOS) structure under a bias voltage applied between the gate metal and the silicon substrate were studied. The binding energy shifts of Pt 4f, Hf 4f, O 1s and Si 2p according to the applied voltage were investigated using the MOS structure. After the influence of measurements on the results was carefully examined under various conditions, the amount of the shifts was analyzed from a viewpoint of band alignment. Based on the experimental results, a new way of interpreting the deviation of the electric properties from the ideal ones in a band diagram was proposed. It was demonstrated that the biased XPS is a very powerful method to understand the origin of the electric properties of MOS. Copyright © 2010 John Wiley & Sons, Ltd.