Characterization of InGaGdN layers prepared by molecular beam epitaxy |
| |
Authors: | Siti Nooraya Mohd Tawil Rina Kakimi Daivasigamani Krishnamurthy Shuichi Emura Hiroyuki Tambo Shigehiko Hasegawa Hajime Asahi |
| |
Institution: | 1. The Institute of Scientific and Industrial Research, Osaka University, 8‐1 Mihagaoka, Ibaraki, 567‐0047 Osaka, Japan;2. Faculty of Electrical and Electronic Engineering, Tun Hussein Onn University of Malaysia, 86400 Batu Pahat Johor, Malaysia |
| |
Abstract: | Gd‐doped InGaN layers were prepared by plasma‐assisted molecular‐beam epitaxy in search of new functional diluted magnetic semiconductors for their potential use in spintronics. The local structure around the Gd atoms was examined by the Gd LIII‐edge of X‐ray absorption fine structure. It was found that the majority of Gd atoms substitutionally occupied the cation sites in the InGaGdN layers. Clear hysteresis and saturation magnetization were observed from the magnetization versus field curves examined by means of a superconducting quantum interference device magnetometer at low and room temperatures. In addition, the incorporation of extra shallow donors by co‐doping InGaN with both Gd and Si showed higher magnetization than the undoped InGaGdN. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| |
Keywords: | molecular beam epitaxy thin films nitride semiconductors XAFS |
|
|