Effect of localized states on internal quantum efficiency of III‐nitride LEDs |
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| Authors: | Sergey Yu Karpov |
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| Institution: | STR Group – Soft‐Impact, Ltd., PO Box 83, 27 Engels ave., St. Petersburg 194156, Russia |
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| Abstract: | A model is suggested accounting for effects of localized electron and hole states formed by composition fluctuations in the InGaN active region of a III‐nitride LED on non‐radiative carrier recombination at threading dislocations. The model enables explanation of the abnormal temperature dependence of internal quantum efficiency (IQE) of a green LED structure recently observed at low current densities. The theoretical predictions are in quantitative agreement with experiment in the temperature range between 200 K and 453 K. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | III− V semiconductors LED internal quantum efficiency electronic properties device modeling |
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