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Formation of long‐range stripe patterns with sub‐10‐nm half‐pitch from directed self‐assembly of block copolymer |
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| Authors: | Mikihito Takenaka Shusuke Aburaya Satoshi Akasaka Hirokazu Hasegawa Nikos Hadjichristidis George Sakellariou Yasuhiko Tada Hiroshi Yoshida |
| Institution: | 1. Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo‐ku, Kyoto 615‐8510, Japan;2. Department of Chemistry, University of Athens, Panepistimiopolis, Zografou, Athens 15771, Greece;3. Materials Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki 319‐1292, Japan |
| Abstract: | We have demonstrated directed self‐assembly of poly(styrene‐b‐dimethylsiloxiane) (PS‐b‐PDMS) down to sub‐10‐nm half‐pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self‐assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub‐10‐nm stripe pattern along variety of grating shape. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2010 |
| Keywords: | block copolymers directed self‐assembly thin films |