1. Semiconductor Physics Institute of Center for Physical Sciences and Technology, A. Gostauto g. 11, 01108 Vilnius, Lithuania;2. CEDIC, Dresden University of Technology, 01062 Dresden, Germany;3. Skyworks Solutions Inc., 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA;4. University of California, San Diego, ECE, La Jolla, CA 92093‐0407, USA
Abstract:
The DC, RF and noise characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base layer widths and δ‐doped layer in the collector were investigated. Analysis of the RF and noise characteristics revealed that the high frequency noise of these HBTs is reduced due to cross‐correlation of shot noise sources and Coulomb blockade from accumulated charge. The measured noise performance is in a good agreement with the HICUM L2 compact model M. Schroter, IEICE Trans. Electron. E88‐C , 1098 (2005)] when correlated shot noise sources with Fano factor for collector shot noise are included.
