Mg‐doped Al0.85Ga0.15N layers grown by hot‐wall MOCVD with low resistivity at room temperature |
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| Authors: | A Kakanakova‐Georgieva D Nilsson M Stattin U Forsberg Haglund A Larsson E Janzn |
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| Institution: | 1. Department of Physics, Chemistry and Biology (IFM), Link?ping University, 581 83 Link?ping, Sweden;2. Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96 G?teborg, Sweden |
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| Abstract: | We report on the hot‐wall MOCVD growth of Mg‐doped Alx Ga1–xN layers with an Al content as high as x ～ 0.85. After subjecting the layers to post‐growth in‐situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 kΩ cm was obtained indicating an enhanced p‐type conductivity compared to published data for Alx Ga1–xN layers with a lower Al content of x ～ 0.70 and a room temperature resistivity of about 10 kΩ cm. It is believed that the enhanced p‐type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot‐wall MOCVD system. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | MOCVD epitaxy high‐Al‐content AlGaN p‐type semiconductors electrical properties |
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