Chloride‐based CVD of 3C‐SiC epitaxial layers on 6H(0001) SiC

The heteroepitaxial growth of 3C‐SiC on 6H‐SiC(0001) on‐axis substrates is demonstrated in this study. A hot‐wall CVD reactor working at a reduced pressure was used to perform growth experiments at temperatures between 1300 °C and 1500 °C. The addition of hydrogen chloride to standard precursors allowed a wide window of operating parameters, which resulted in the growth of very high quality and purity 3C‐SiC layers, with a morphology characterized largely by single‐domains, especially when nitrogen was intentionally added. Growth rate of 10 µm/h and n‐type background doping in the low 10¹⁵ cm^–3 range were achieved. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)