Trends in surface roughening: analysis of ion-sputtered GaAs(110) |
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| Institution: | 1. Univ. Grenoble Alpes, F-38000, CEA LETI, MINATEC Campus, F-38054 Grenoble, France;2. Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France;1. Budker Institute of Nuclear Physics SB RAS, Novosibirsk, Russian Federation;2. Novosibirsk State University, Novosibirsk, Russian Federation;3. Novosibirsk State Technical University, Novosibirsk, Russian Federation;4. Saarland University, Saarbrücken, Germany;5. St Petersburg State University, St. Petersburg, Russian Federation;6. Institute of Computational Mathematics and Mathematical Geophysics SB RAS, Novosibirsk, Russian Federation;1. Budker Institute of Nuclear Physic SB RAS, Novosibirsk, 630090, Russia;2. Novosibirsk State University, Novosibirsk, 630090, Russia;3. Novosibirsk State Technical University, Novosibirsk, 630092, Russia |
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| Abstract: | The effects of diffusion kinetics on surface roughness were investigated by measuring the dependence of surface width and step density on the amount of material removed for GaAs(110) sputtered at different temperatures (T). Surfaces after the removal of ten monolayers of material at 625 K were rougher on a small scale than those at 725 K, but they were smoother on a large scale. The increased large-scale roughness at high T was caused by increased diffusion on terraces and along step-edges, but insufficient cross-step transport. The high step-density created at low T enhanced cross-step transport. This mechanism, first proposed for the re-entrant layer-by-layer growth, is expected to cause the long-range roughness to increase with T for many solid surfaces after substantial sputtering or deposition over a certain range of T. |
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