Low temperature adsorption of water on cleaved GaAs(110) surfaces |
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| Affiliation: | 1. Physics Department, Faculty of science, Shahid Chamran University of Ahvaz, Ahvaz, Islamic Republic of Iran;2. Department of Electronic and Electrical Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Islamic Republic of Iran |
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| Abstract: | The adsorption and desorption of water on UHV-cleaved GaAs(110) surfaces was studied using synchrotron-excited photoelectron spectroscopy. Water was adsorbed at T = 100 K. Desorption was studied during heating to room temperature. At low coverages, dissociated species are observed followed by molecular adsorption. Molecular water is desorbed at T = 160 K. The dissociated species are also mainly desorbed after heating to room temperature. The chemical changes are accompanied by substrate binding-energy shifts, reflecting the movement of the Fermi level at the surface. |
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