Synthesis and thermoelectric properties of Cu excess Cu2ZnSnSe4 |
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| Authors: | Yongkwan Dong Hsin Wang George S Nolas |
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| Institution: | 1. Department of Physics, University of South Florida, Tampa, FL 33620, USA;2. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA |
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| Abstract: | Quaternary stannites with an excess of copper were successfully synthesized by reacting the constituent elements and subsequent solid state annealing, followed by densification by hot‐pressing. The composition for each specimen was confirmed with a combination of Rietveld refinement and elemental analysis. Their high temperature thermoelectric properties were measured from 300 K to 800 K and compared with that of Cu2ZnSnSe4. The thermal conductivity decreases significantly with increasing Cu content at elevated temperatures due to the crystal structure of this material system. A maximum ZT value of 0.86 was obtained at 800 K for the specimen with the highest Cu content, Cu2.2Zn0.8SnSe4. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | stannites thermoelectrics semiconductors Cu2ZnSnSe4 |
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