Silicon surface passivation by atomic‐layer‐deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants |
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| Authors: | Dongchul Suh Wensheng Liang |
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| Affiliation: | 1. Global Frontier Center for Multiscale Energy Systems, Seoul National University, , 151‐744 Seoul, Republic of Korea;2. Centre for Sustainable Energy Systems, The Australian National University, , Acton, 0200 Canberra, Australia |
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| Abstract: | We investigate the effect of O3 and H2O oxidant pre‐pulse prior to Al2O3 atomic layer deposition for Si surface passivation. Interfacial oxide SiOx formed by the O3 pre‐pulse is more beneficial than that by H2O to a high level of surface passivation. The passivation of thinner H2O–Al2O3 films is more improved by this O3 pre‐pulse. O3 pre‐pulse for 10 nm H2O–Al2O3 reduces saturation current density in boron emitter to 18 fA cm–2 by a factor of 1.7. Capacitance–voltage measurements reveal this interfacial oxide plays a role of decreasing interface trap density without detrimental effect to negative charge density of Al2O3. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | atomic layer deposition surface passivation Al2O3 silicon |
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