1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano‐tech and Nano‐bionics, Chinese Academy of Sciences, 398 Ruoshui Road, 215123 Suzhou, P.R. China;2. WuXiJingkai Technology Co., Ltd., 214061 Wuxi, P.R. China
Abstract:
In this Letter, a GaN‐based high‐power (HP) single‐chip (SC) large‐area LED with parallel and series network structure is fabricated. The optical characteristics of the HP‐SC LED is investigated. Driven at 600 mA, the optical output power of the HP‐SC LED chip is measured to be 9.7 W, corresponding to an EQE of 26.4%, which is 19.6% lower than that of the standard small LED cell due to both the lateral light‐extraction efficiency degradation and the self‐heating effect. A statistical analysis was carried out to investigate the yield of the fabricated HP‐SC LEDs, the experimental results agree with the theoretical calculations very well, validating the feasibility of this design on the production yield for the large‐area LEDs.
