Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals |
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Authors: | L Csepregi RP Küllen JW Mayer TW Sigmon |
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Institution: | California Institute of Technology, Pasadena, California, 91125, USA;Oregon State University, Corvallis, Oregon, 97331, USA |
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Abstract: | Epitaxial regrowth of ion-implanted amorphous Ge on the underlying crystal substrate occurs between 300 to 400°C with an activation energy of 2.0 eV and a rate of 100Å/min on <100> Ge at 350°C. The regrowth rate is strongly dependent on the orientation of the underlying Ge crystal. The regrowth behavior of amorphous Ge is similar to that of implanted amorphous Si. |
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