GaN nanowires for piezoelectric generators |
| |
| Authors: | Noelle Gogneau Pascal Chrétien Elisabeth Galopin Stephane Guilet Laurent Travers Jean‐Christophe Harmand Frédéric Houzé |
| |
| Affiliation: | 1. Laboratoire de Photonique et de Nanostructures, CNRS‐LPN‐UPR20, Route de Nozay, 91460 Marcoussis, France;2. Laboratoire de Génie Electrique de Paris, UMR CNRS‐Supélec 8507, Universités Pierre et Marie Curie et Paris‐Sud, 11 rue Joliot‐Curie, 91192 Gif sur Yvette, France;3. Present address: Institute d'Electronique, de Microelectronique et de Nanotechnologie, Avenue Poincaré, 59652 Villeneuve d'Ascq, France |
| |
| Abstract: | We demonstrate the high potential of GaN nanowires (NWs) to convert mechanical energy into electric energy. Using an atomic force microscope equipped with a Resiscope module, an average output voltage of –74 mV and a maximum of –443 mV ± 2% per NW were measured. This latter value is the highest reported so far for GaN NWs. By considering these output signals, we have estimated an average and a maximum power density generated by one layer of GaN NWs of the order of 5.9 mW/cm2 and 130 mW/cm2, respectively. These results offer promising prospects for the use of GaN NWs for high‐efficiency ultracompact piezogenerators. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| |
| Keywords: | GaN nanowires piezoelectricity piezogenerators energy harvesting atomic force microscopy |
|
|
