| Si中Au受主能级的流体静压力移动 |
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| 引用本文： | 李名复,陈建新,姚玉书,白光. Si中Au受主能级的流体静压力移动[J]. 物理学报, 1985, 34(8): 1068-1074 |
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| 作者姓名： | 李名复 陈建新 姚玉书 白光 |
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| 作者单位： | (1)北京工业大学无线电系; (2)中国科学技术大学研究生院; (3)中国科学院物理研究所 |
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| 摘 要： | 用恒温的瞬态电容法测量了各向同性流体静压力P下,Si中Au受主能级ET的压力系数。在0—8kbar压力范围内,(?(Ec-ET))/(?P)=-1.9meV/kbar。该能级对电子俘获截面在实验误差范围内与压力无关。以上数据与文献[13]报道的Si中Au受主深能级在单轴应力下的压力系数作了比较。结果说明该深能级缺陷势不具有Td对称性,因此Si中Au受主能级看来并不来源于简单的Si中Au替位或间隙组态。关键词：
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| 收稿时间： | 1984-08-18 |
HYDROSTATIC PRESSURE DEPENDENCE OF GOLD ACCEPTOR LEVELS IN Si |
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| LI MING-FU,CHEN JIAN-XIN,YAO YU-SHU and BAI GUANG. HYDROSTATIC PRESSURE DEPENDENCE OF GOLD ACCEPTOR LEVELS IN Si[J]. Acta Physica Sinica, 1985, 34(8): 1068-1074 |
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| Authors: | LI MING-FU CHEN JIAN-XIN YAO YU-SHU BAI GUANG |
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| Abstract: | The hydrostatic pressure coefficient of gold acceptor levels Er in Silicon was measured by transient capacitance method. Under the pressure range of 0-8 Kbar, thepressure coefficient (?(Ec-ET))/(?P) =-1.9 meV/kbar. The electron capture cross section of gold acceptor centers does not depend on pressure within the experimental accuracy. By comparing the present result of hydrostatic pressure coefficient with the uniaxial pressure coefficient reported in [13], we conclude that the defect potential is lack of Td symmetry. Therefore, the gold acceptor levels are not originated by simple gold substitutional or interstitial configuration in Si crystals.
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