Stimulation of secondary negative ion emission by implantation of alkaline ions into the surface layer of a solid followed by heating |
| |
Authors: | A A Aliev Z A Isakhanov Z E Mukhtarov and M K Ruzibaeva |
| |
Institution: | (1) College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, 350007, China; |
| |
Abstract: | A new method of stimulating secondary negative ion emission is suggested that is based on implantation of alkaline ions into
the surface layer of a solid with subsequent heating to a temperature providing optimal coverage of the surface (about half
a monolayer) by activator (alkaline) ions. It is shown that, by appropriately selecting the implantation dose (1018–1019 cm−3) and surface temperature (500–900°C), one can reach such a degree of coverage of the sample surface by activator ions that
its work function eφ becomes minimal: 1.9 eV for molybdenum and 2.1 eV for copper. It is found that, with the implantation (irradiation) dose
and surface temperature chosen properly, one can, by means of outdiffusion of cesium atoms, achieve such a degree of surface
coverage that remains unchanged during the continuous sputtering of the surface by a cesium ion beam. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|