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Efficient diode-pumped Nd:GGG laser operation at 933.6 and 937.3 nm
Authors:B.?Xu,P.?Camy  author-information"  >  author-information__contact u-icon-before"  >  mailto:patrice.camy@ensicaen.fr"   title="  patrice.camy@ensicaen.fr"   itemprop="  email"   data-track="  click"   data-track-action="  Email author"   data-track-label="  "  >Email author,J.?L.?Doualan,R.?Soulard,A.?Braud,Z.?P.?Cai,R.?Moncorgé
Affiliation:1.Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP),UMR 6252 CEA-CNRS-ENSICaen, Université de Caen,Caen,France;2.Department of Electronic Engineering,Xiamen University,Xiamen,People’s Republic of China
Abstract:CW laser emission on the quasi 3-level (4F3/24I9/2) transition in Nd:GGG is reported for different pump focusing and resonator dimensions. A nearly hemispherical plano-concave resonator led at 937.3 nm to a maximum output power of 4.1 W for an incident pump power of 21.7 W, thus corresponding to a slope efficiency of about 23.5%. Laser operation was also obtained for the first time around 933.6 nm by using a glass etalon for frequency selection with a maximum output power of 2.3 W and a slope efficiency of 16% with respect to the incident pump power. Dual-wavelength operation (around 933.6 and 937.3 nm), which offers a potential source to generate THz radiation, is also reported.
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