Middle-infrared random lasing of Cr doped ZnSe, ZnS, CdSe powders, powders imbedded in polymer liquid solutions, and polymer films |
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| Authors: | C Kim DV Martyshkin SB Mirov |
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| Institution: | a Center for Optical Sensors and Spectroscopies, University of Alabama at Birmingham, Department of Physics, 1300 University Boulevard, 1530 3Rd Ave S, Birmingham, AL 35294, USA
b Graduate School of Industrial Science and Technology, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan |
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| Abstract: | Room temperature (RT) middle-infrared (Mid-IR) random lasing of chromium- (Cr) doped ZnSe, ZnS, and CdSe powders, powders imbedded in perfluorocarbon liquid polymer solutions, and fluorocarbon polymer films is reported. Laser active powders were prepared without a stage of bulk crystal growth by annealing of starting chemicals (pure, mixed ZnSe:CrSe; ZnS:CrS; CdSe:CrSe). Mixture of the different semiconductor hosts allows tuning oscillation wavelength from 2240 to 2630 nm. |
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| Keywords: | 42 62 Fi 42 70 Hj 81 20 Ev 83 80 Sg |
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