| SiC宽带功率放大器模块设计分析 |
| |
| 引用本文： | 张书敬.SiC宽带功率放大器模块设计分析[J].无线电工程,2011,41(5):39-42. |
| |
| 作者姓名： | 张书敬 |
| |
| 作者单位： | 中国电子科技集团公司第五十四研究所,河北,石家庄,050081 |
| |
| 摘 要： | 功率放大器是射频前端中的关键部件,宽带是目前功率放大器的主要发展趋势。基于碳化硅(SiC)宽禁带功率器件,利用ADS仿真软件,依据宽带功率放大器的各项指标进行电路的设计、优化和仿真,制作了500~2 000 MHz波段宽带功率放大器,并对放大器进行了性能测试和环境实验。测试结果表明利用该方法设计宽带功率放大器是可行的,SiC宽禁带功率器件具有较宽的工作带宽。
|
| 关 键 词： | SiC 功率器件 宽带功率放大器 匹配电路 ADS |
Design and Analysis of SiC Wideband Power Amplifier Module |
| |
| ZHANG Shu-jing.Design and Analysis of SiC Wideband Power Amplifier Module[J].Radio Engineering of China,2011,41(5):39-42. |
| |
| Authors: | ZHANG Shu-jing |
| |
| Institution: | ZHANG Shu-jing(The 54th Research Institute of CETC,Shijiazhuang Hebei 050081,China) |
| |
| Abstract: | Wide-band is the main development trend of power amplifier,which is a key component of broadband RF front end.Based on the SiC wide band gap semiconductor power devices,a 500～2 000 MHz band power amplifier is developed according to the specifications of the amplifier through the design,optimization and simulation of the electric circuits by using ADS.The performance test and environment experiment of the amplifier are carried out,which show that the method is feasible for simulation and design of wide-band power amplifier.The SiC wide band gap semiconductor power devices have very wide operating bandwidth. |
| |
| Keywords: | SiC power devices wide-band power amplifier matching circuits ADS |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
