高性能IGBT模块的设计考虑

本文对ＩＧＢＴ模块中功率芯片（ＩＧＢＴ和续流二极管）的优化设计进行了讨论。通过优化几个重要的工艺参数并改进器件的结构，ＩＧＢＴ不仅有足够的短路容量，而且正向压降与电流下降时间之间可实现最佳折衷。另外，续流二极管的反向恢复特性也有明显改善。通过采用衬底控制技术，ＩＧＢＴ模块的输出特性不受温度的影响，输出电流更稳，输出阻抗更高。本文详细介绍了整个设计考虑。

Design Considerations on High Performance IGBT Module

The power chips(IGBT and freewheel diode)on IGBT module are optimally designed.By opti- mizing some key process parameters and improving device structures,IG BT achieves adequate short circuit capability as well as the lowest trade-off line between forward drop and current fall time. The reverse recov- ery properties of the freewheel diode are also distinctly improved. By using substrate control technique,the output characteristics of IGBT module are not influenced by temperature changes,the output cutrent is stabler and the output impedance is higher.Design considerations on the module are introduced in detail in this pa- per.