In-beam Mössbauer spectroscopy:57Fe in Si and Ge |
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Authors: | P Schwalbach M Hartick M Ciani E Kankeleit B Keck R Sieleman B Stahl L Wende |
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Institution: | (1) Instritut für Kernphysik, Technische Hochschule Darmstadt, D-6100 Darmstadt, Germany;(2) Hahn-Meitner-Institut, D-1000 Berlin 39, Germany |
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Abstract: | Fe has been studied in the semiconductors Si and Ge with the Coulomb excitation recoil implantation technique in a wide temperature
range. In the case of Fe inSilicon it was found that one third of the implanted atoms land on interstitial sites. The long range diffusion of these atoms could
be observed microscopically at temperatures around 600 K. The isomer shift of interstitial Fe in Si was determined. The remaining
atoms exhibit a strong quadrupole splitting on disturbed sites. This component seems to relax into a state with higher symmetry
above 700 K. InGermanium a similar situation is found. Whereas iron on disturbed sites dominates the spectra, the direct implantation into interstitial
sites is also observed below 200 K. At higher temperatures the substitutional position is preferred. The isomer shifts for
interstitial and substitutional Fe in Si and in Ge are in good agreement with calculated electron densities. |
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