Ballistic transport in bilayer nano-graphite ribbons under gate and magnetic fields |
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Authors: | Shih-Jye Sun C P Chang |
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Institution: | (1) Department of Applied Physics, National University of Kaohsiung, Kaohsiung, 811, Taiwan;(2) Center for General Education, Tainan University of Technology, 710 Tainan, Taiwan |
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Abstract: | This study uses the tight-binding model to examine the ballistic transport of short and infinitely long bilayer nano-graphite
ribbons for different stacked structures, AA and AB, under perpendicularly applied gate and magnetic fields. In the small
bias region, the conduction of the AB-stacked ribbon is better than for the AA. Under a gate field with small bias, the AB-stacked
ribbon exhibits a significant current peak at the zero gate field point, similar to the graphene ribbon. On the contrary,
this current peak is not found in the AA-stacked case. Under a perpendicular magnetic field with small bias, the magnetoresistance
ratio in both stacked graphene ribbons are proportional to the square of the magnetic field. |
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Keywords: | PACS" target="_blank">PACS 73 23 Ad Ballistic transport 73 21 Ac Multilayers 73 43 Qt Magnetoresistance |
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