Diffusion degradation model for a heterogeneous photoconducting system

It is shown that the excitation of the electronic subsystem in heterogeneous semiconductors causes the gettering (accumulation) of defects in regions where the diffusion coefficient of defects is low. This is because this parameter in the wide-gap (active) region of the material increases, remaining low in narrow-gap areas (drains). This effect improves the radiation hardness of the heterogeneous material, as demonstrated with the CdS-PbS system, which exhibits a limited series of solid solutions.