Raman gain,effectiveg-value and spontaneous spin-flip Raman linewidth in Hg0.77Cd0.23Te

We report on measurements of spin-flip Raman gain inn-Hg_1?x Cd _x Te (x=0.23, carrier density 1.0×10¹⁵cm^?3) as a function of the magnetic field up to 1.6T. The measurements were carried out by a small signal gain technique at a temperature of 1.8 K. Furthermore, the measurements yield lineshapes and linewidths of the spontaneous scattering and allow a precise determination of the effectiveg-value. The highest gain observed is 0.2 cm/W. The band edge value of the effectiveg-value is ?93.2 and the widths of the symmetric lines are between 18 and 120 G, depending on the magnetic field.