酞菁氯化铟的固相合成及光敏性能

以尿素、邻苯二甲酸酐、钼酸铵和四水合三氯化铟为原料, 乙酸钠为催化剂, 采用固相法合成酞菁氯化铟, 并用元素分析、UV-Vis、IR和XRD进行了表征. 考察了反应物配比、催化剂、反应温度和时间对产率的影响, 寻找出最佳制备条件为n(尿素)∶n(邻苯二甲酸酐)∶n(三氯化铟)=14∶4.5∶1, 以乙酸钠为催化剂, 130 ℃下恒温0.5 h, 在220 ℃下反应4 h后, 用88％(质量分数)浓硫酸提纯. 研究了酞菁氯化铟光敏电阻薄膜的光敏性能, 结果表明, 当用0.2 g酞菁氯化铟和0.6 g PVB制备光敏电阻薄膜时, 分散介质丁酮-环己酮的最佳用量为36 mL, 其电阻灵敏度保持在1.50×10⁸以上, 积分灵敏度保持在30 μA/(lx·V)以上. 研究结果表明, 酞菁氯化铟光敏电阻薄膜具有很好的光敏性能.

Solid Synthesis and Photosensitive Properties of Chloroindium Phthalocyanine

Metallophthalocyanines are known not only as classical dyes in practical use but also as modern functional materials. However, detailed preparation of chloroindium phthalocyanine wasn′t reported up to the present. In this paper, chloroindium phthalocyanine was synthesized by the solid reaction of urea, phthalic anhydride, molybdic ammonium with hydrated indium trichloride using acetic sodium as catalyzer. The structure was verified by elemental analyst, UV-Vis, IR and XRD. Molar ratio of materials, catalyzer, reaction temperature and reaction time were discussed on the effect of yield of chloroindium phthalocyanine, so the optimal conditions were summarized as follows: n(urea)∶n(phthalic anhydride)∶n(indium trichloride)=14∶4.5∶1, acetic sodium was used as catalyzer. Firstly, reaction mixture was kept at 130 ℃ for 0.5 h, and then the reaction was carried out at 220 ℃ for 4 h. 88% H2SO4 was used to purify the product. In addition, the photosensitive properties of photosensitive resistance films were also studied. It was found that when 0.2 g chloroindium phthalocyanine and 0.6 g PVB were used to prepare photosensitive resistance films, the optimal dosage of dispersant butanone-cyclohexanone is 36 mL. The resistance sensitivity and integral ratio sensitivity of the chloroindium phthalocyanine films were over 1.50×108 and 30 μA/(lx·V), respectively. These results show that chloroindium phthalocyanine films have good photosensitive properties.