Temperature-dependent optical properties of wurtzite InN |
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| Authors: | Fei Chen A. N. Cartwright Hai Lu William J. Schaff |
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| Affiliation: | a Department of Electrical Engineering, University at Buffalo, State University of New York, 332 Bonner Hall, Buffalo, NY 14260, USA;b Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA |
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| Abstract: | Optical properties and carrier recombination dynamics of a series of InN epilayers, with varying free electron concentrations, grown by molecular beam epitaxy were studied by steady-state photoluminescence (PL) and time-resolved differential transmission spectroscopy. At room temperature strong PL around 0.7 eV was observed. Temperature-dependent PL measurements show a redshift of the peak energy and a linear increase of the emission linewidth with temperature. Furthermore, our results demonstrate that room temperature carrier lifetimes are inversely proportional to the free electron concentrations for theses samples. Carrier lifetime as long as 1.3 ns was observed in the best quality sample, indicating a highly improved crystalline quality. |
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| Keywords: | Optical properties Time-resolved spectroscopy |
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