Effect of geometry upon the performance of a thin film ferroelectric capacitor |
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| Authors: | I. Pane N.A. Fleck J.E. Huber D.P. Chu |
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| Affiliation: | 1. Department of Civil Engineering, Bandung Institute of Technology, Ganesha 10, Bandung 40132, Indonesia;2. Department of Engineering, University of Cambridge, Trumpington Street CB2 1PZ, UK;3. Department of Engineering Science, University of Oxford, Parks Road OX1 3PJ, UK;4. Cambridge Research Laboratory of Epson, 9a Science Park CB4 0FE, UK |
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| Abstract: | The finite element method is used to investigate the performance of a ferroelectric random access memory as a function of its geometry. Performance is characterised by the charge versus electric field relation, and the sensitivity of performance to geometry is explored. The primary geometric variables are the dimensions of a prismatic two-dimensional (2D) island of ferroelectric material, and the edge inclination angle caused by the etching process along the sides of the island. The performance of the two-dimensional ferroelectric device is compared to those of an unsupported ferroelectric thin film and of a ferroelectric film bonded to a substrate. |
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