| A-188 V 7.2Ω·mm~2,P-channel high voltage device formed on an epitaxy-SIMOX substrate |
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| 引用本文： | 吴丽娟,胡盛东,张波,罗小蓉,李肇基.A-188 V 7.2Ω·mm~2,P-channel high voltage device formed on an epitaxy-SIMOX substrate[J].中国物理 B,2011,20(8):87101-087101. |
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| 作者姓名： | 吴丽娟 胡盛东 张波 罗小蓉 李肇基 |
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| 作者单位： | [1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China [2]College of Communication Engineering, ChengduUniversity of Information Technology, Chengdu 610225, China [3]College of Communication Engineering, Chongqing University, Chongqing 400044, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the Fund of
the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the
University of Electronic Science and Technology of China (Grant No. jx0721). |
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| 摘 要： | This paper proposes a new n +-charge island (NCI) P-channel lateral double diffused metal-oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate.Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n +-regions on the interface of a buried oxide layer,and therefore the electric field of a dielectric buried layer (E I) is enhanced by these holes effectively,leading to an improved breakdown voltage (BV).The V B and E I of the NCI P-channel LDMOS increase to-188 V and 502.3 V/μm from 75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer,respectively.The influences of structure parameters on the proposed device characteristics are investigated by simulation.Moreover,compared with the conventional device,the proposed device exhibits low special on-resistance.
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| 关 键 词： | dielectric buried layer breakdown voltage self-adapted holes epitaxy-SIMOX |
| 收稿时间： | 2010-12-09 |
A–188 V 7.2 Ω·mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate |
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| Wu Li-Juan,Hu Sheng-Dong,Zhang Bo,Luo Xiao-Rong and Li Zhao-Ji.A–188 V 7.2 Ω·mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate[J].Chinese Physics B,2011,20(8):87101-087101. |
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| Authors: | Wu Li-Juan Hu Sheng-Dong Zhang Bo Luo Xiao-Rong and Li Zhao-Ji |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, China; College of Communication Engineering, Chongqing University, Chongqing 400044, China |
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| Abstract: | This paper proposes a new n+-charge island (NCI) P-channel lateral double diffused metal—oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate. Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n+ -regions on the interface of a buried oxide layer, and therefore the electric field of a dielectric buried layer (EI) is enhanced by these holes effectively, leading to an improved breakdown voltage (BV). The VB and EI of the NCI P-channel LDMOS increase to —188 V and 502.3 V/μm from -75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer, respectively. The influences of structure parameters on the proposed device characteristics are investigated by simulation. Moreover, compared with the conventional device, the proposed device exhibits low special on-resistance. |
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| Keywords: | dielectric buried layer breakdown voltage self-adapted holes epitaxy-SIMOX |
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